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FP25R12U1T4

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Shenzhen Wonder-Chip Electronics Company Limited

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FP25R12U1T4

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 39 A

Pd - Power Dissipation : 190 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : SmartPIM1

Maximum Operating Temperature : + 150 C

Packaging : Bulk

Configuration : PIM 3-Phase Input Rectifier

Collector-Emitter Saturation Voltage : 1.85 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules IGBT Module 25A 1200V

Stock : In Stock

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The FP25R12U1T4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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