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BSM10GP120

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Shenzhen Wonder-Chip Electronics Company Limited

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BSM10GP120

Gate-Emitter Leakage Current : 300 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 20 A

Pd - Power Dissipation : 100 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : EconoPIM2

Maximum Operating Temperature : + 125 C

Packaging : Tray

Configuration : Hex

Collector-Emitter Saturation Voltage : 2.4 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules 1200V 10A PIM

Stock : In Stock

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The BSM10GP120,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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