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IXGN82N120B3H1

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Shenzhen Wonder-Chip Electronics Company Limited

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IXGN82N120B3H1

Gate-Emitter Leakage Current : +/- 200 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 145 A

Collector- Emitter Voltage VCEO Max : 1.2 kV

Package / Case : SOT-227B-4

Maximum Operating Temperature : + 150 C

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 2.7 V

Product : IGBT Silicon Modules

Manufacturer : IXYS

Description : IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode

Stock : In Stock

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The IXGN82N120B3H1,from IXYS,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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