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Gate-Emitter Leakage Current : 120 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 15 A
Pd - Power Dissipation : 80 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : EconoPACK 2
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Configuration : Hex
Collector-Emitter Saturation Voltage : 2.7 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules 1200V 10A FL BRIDGE
Stock : In Stock
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BSM10GD120DN2 Images |