Sign In | Join Free | My frbiz.com |
|
Gate-Emitter Leakage Current : 300 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 70 A
Pd - Power Dissipation : 250 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : EconoPIM3
Maximum Operating Temperature : + 125 C
Configuration : Hex
Collector-Emitter Saturation Voltage : 2.2 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules 600V 50A PIM
Stock : In Stock
![]() |
BSM50GP60G Images |