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FS800R07A2E3_B31

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Shenzhen Wonder-Chip Electronics Company Limited

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FS800R07A2E3_B31

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 800 A

Pd - Power Dissipation : 1500 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : HybirdPack2

Maximum Operating Temperature : + 150 C

Packaging : Tray

Configuration : Single

Collector-Emitter Saturation Voltage : 1.4 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules HYBRID PACK 2

Stock : In Stock

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The FS800R07A2E3_B31,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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