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FD800R33KF2C

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Shenzhen Wonder-Chip Electronics Company Limited

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FD800R33KF2C

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 1300 A

Pd - Power Dissipation : 9.6 kW

Collector- Emitter Voltage VCEO Max : 3300 V

Package / Case : IHM190

Maximum Operating Temperature : + 125 C

Configuration : Dual

Collector-Emitter Saturation Voltage : 3.4 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules 3300V 800A CHOPPER

Stock : In Stock

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The FD800R33KF2C,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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