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Gate-Emitter Leakage Current : 0.4 uA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 450 A
Collector- Emitter Voltage VCEO Max : 1200 V
Pd - Power Dissipation : 1.6 kW
Maximum Operating Temperature : + 125 C
Configuration : Dual
Collector-Emitter Saturation Voltage : 1.75 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules IGBT 1200V 300A
Stock : In Stock
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