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IXGT32N120A3

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Shenzhen Wonder-Chip Electronics Company Limited

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IXGT32N120A3

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 75 A

Pd - Power Dissipation : 300 W

Collector- Emitter Voltage VCEO Max : 1.2 kV

Package / Case : TO-268

Maximum Operating Temperature : + 150 C

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 1.2 kV

Manufacturer : IXYS

Description : IGBT Modules GenX3 1200V IGBTs

Stock : In Stock

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The IXGT32N120A3,from IXYS,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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