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FS50R17KE3_B17

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Shenzhen Wonder-Chip Electronics Company Limited

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FS50R17KE3_B17

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 82 A

Pd - Power Dissipation : 345 W

Collector- Emitter Voltage VCEO Max : 1.7 kV

Package / Case : Module

Maximum Operating Temperature : + 125 C

Configuration : IGBT-Inverter

Collector-Emitter Saturation Voltage : 2 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules IGBT MODULE HALF BRG 50A 1700V

Stock : In Stock

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The FS50R17KE3_B17,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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