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STGIPN3H60T-H

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Shenzhen Wonder-Chip Electronics Company Limited

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STGIPN3H60T-H

Gate-Emitter Leakage Current : -

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 3 A

Pd - Power Dissipation : 8 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : NDIP-26L

Maximum Operating Temperature : + 150 C

Packaging : Tray

Configuration : 3-Phase Inverter

Collector-Emitter Saturation Voltage : 2.15 V

Product : IGBT Silicon Modules

Manufacturer : STMicroelectronics

Description : IGBT Modules IGBT & Power Bipolar

Stock : In Stock

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The STGIPN3H60T-H,from STMicroelectronics,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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