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Gate-Emitter Leakage Current : 300 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 135 A
Pd - Power Dissipation : 250 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : EconoPIM3
Maximum Operating Temperature : + 125 C
Configuration : Hex
Collector-Emitter Saturation Voltage : 1.95 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules 600V 100A PIM
Stock : In Stock
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