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FZ30R07W1E3B31ABOMA1

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Shenzhen Wonder-Chip Electronics Company Limited

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FZ30R07W1E3B31ABOMA1

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 45 A

Pd - Power Dissipation : 150 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : EasyPack1B

Maximum Operating Temperature : + 150 C

Packaging : Tray

Configuration : Single

Collector-Emitter Saturation Voltage : 1.8 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Stock : In Stock

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The FZ30R07W1E3B31ABOMA1,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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