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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 100 A
Pd - Power Dissipation : 355 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : 34MM
Maximum Operating Temperature : + 125 C
Configuration : Dual
Collector-Emitter Saturation Voltage : 2.2 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules 600V 75A DUAL
Stock : In Stock
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