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BSM35GB120DN2

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Shenzhen Wonder-Chip Electronics Company Limited

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BSM35GB120DN2

Gate-Emitter Leakage Current : 150 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 50 A

Pd - Power Dissipation : 280 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : Half Bridge1

Maximum Operating Temperature : + 150 C

Configuration : Half Bridge

Collector-Emitter Saturation Voltage : 3.2 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules 1200V 35A DUAL

Stock : In Stock

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The BSM35GB120DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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