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FS3L50R07W2H3F_B11

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Shenzhen Wonder-Chip Electronics Company Limited

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FS3L50R07W2H3F_B11

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 75 A

Pd - Power Dissipation : 215 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : EasyPack2B

Maximum Operating Temperature : + 150 C

Configuration : 3-Phase

Collector-Emitter Saturation Voltage : 1.45 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules

Stock : In Stock

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The FS3L50R07W2H3F_B11,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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