: Shenzhen Wonder-Chip Electronics Company Limited

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FS150R12KT4_B9

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Shenzhen Wonder-Chip Electronics Company Limited

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FS150R12KT4_B9

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 150 A

Collector- Emitter Voltage VCEO Max : 1200 V

Pd - Power Dissipation : 750 W

Maximum Operating Temperature : + 150 C

Collector-Emitter Saturation Voltage : 2.1 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

Description : IGBT Modules IGBT Module 150A 1700V

Stock : In Stock

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The FS150R12KT4_B9,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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